? semiconductor components industries, llc, 2013 september, 2013 ? rev. 1 1 publication order number: njw0281/d njw0281g (npn) njw0302g (pnp) complementary npn-pnp power bipolar transistors these complementary devices are lower power versions of the popular njw3281g and njw1302g audio output transistors. with superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications. features ? exceptional safe operating area ? npn/pnp gain matching within 10% from 50 ma to 3 a ? excellent gain linearity ? high bvceo ? high frequency ? these devices are pb ? free and are rohs compliant benefits ? reliable performance at higher powers ? symmetrical characteristics in complementary configurations ? accurate reproduction of input signal ? greater dynamic range ? high amplifier bandwidth applications ? high ? end consumer audio products ? home amplifiers ? home receivers ? professional audio amplifiers ? theater and stadium sound systems ? public address systems (pas) maximum ratings rating symbol value unit collector ? emitter voltage v ceo 250 vdc collector ? base voltage v cbo 250 vdc emitter ? base voltage v ebo 5.0 vdc collector ? emitter voltage ? 1.5 v v cex 250 vdc collector current ? continuous i c 15 adc collector current ? peak (note 1) i cm 30 adc base current ? continuous i b 1.5 adc total power dissipation @ t c = 25 c p d 150 watts operating and storage junction temperature range t j , t stg ? 65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. pulse test: pulse width = 5.0 ms, duty cycle < 10%. 15 amperes complementary silicon power transistors 250 volts, 150 watts http://onsemi.com device package shipping ordering information to ? 3p case 340ab styles 1,2,3 marking diagram njw0302g to ? 3p (pb ? free) 30 units/rail njw0281g to ? 3p (pb ? free) 30 units/rail xxxx = 0281 or 0302 g = pb ? free package a = assembly location y = year ww = work week njwxxxg ayww 1 2 3 4 123 1 base emitter 3 collector 2, 4 1 base emitter 3 collector 2, 4 pnp npn
njw0281g (npn) njw0302g (pnp) http://onsemi.com 2 thermal characteristics characteristic symbol value unit thermal resistance, junction ? to ? case r jc 0.83 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter sustaining voltage (i c = 30 ma, i b = 0) v ceo(sus) 250 ? v collector cutoff current (v cb = 250 v, i e = 0) i cbo ? 10 a emitter cutoff current (v eb = 5.0 v, i c = 0) i ebo ? 5.0 a on characteristics dc current gain (i c = 0.5 a, v ce = 5.0 v) (i c = 1.0 a, v ce = 5.0 v) (i c = 3.0 a, v ce = 5.0 v) h fe 75 75 75 150 150 150 ? collector ? emitter saturation voltage (i c = 5.0 a, i b = 0.5 a) v ce(sat) ? 1.0 v base ? emitter on voltage (i c = 5.0 a, v ce = 5.0 v) v be(on) ? 1.2 v dynamic characteristics current ? gain ? bandwidth product (i c = 1.0 a, v ce = 5.0 v, f test = 1.0 mhz) f t 30 ? mhz output capacitance (v cb = 10 v, i e = 0, f test = 1.0 mhz) c ob ? 400 pf 160 0 t c , case temperature ( c) 40 60 100 120 160 80 140 20 figure 1. power derating 0 20 40 60 80 100 140 120 p d , power dissipation (w) 0.01 0.1 1 10 100 1 10 100 1000 1.0 ms 10 ms 5.0 ms 100 ms dc v ce , collector ? emitter voltage (v) i c , collector current (a) figure 2. safe operating area
njw0281g (npn) njw0302g (pnp) http://onsemi.com 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.01 0.1 1 10 100 i c , collector current (a) figure 3. njw0281g dc current gain 100 c ? 25 c 25 c figure 4. njw0302g dc current gain v ce = 5.0 v h fe , dc current gain i c , collector current (a) figure 5. njw0281g base ? emitter voltage i c , collector current (a) 0.01 0.1 1 10 100 figure 6. njw0302g base ? emitter voltage v be(on) , base ? emitter voltage (v) i c , collector current (a) v ce = 5.0 v 25 c ? 25 c 100 c v be(on) , base ? emitter voltage (v) h fe , dc current gain 10 100 500 0.05 0.1 1 10 50 100 c ? 25 c 25 c v ce = 5.0 v ? 0.1 0.4 0.9 1.4 1.9 2.4 10 100 500 0.05 0.1 1 10 50 100 c ? 25 c 25 c v ce = 5.0 v figure 7. njw0281g saturation voltage 0.01 0.1 1 10 0.01 0.1 1 10 100 i c /i b = 10 25 c ? 25 c 100 c i c , collector current (a) v ce(sat) , collector ? emitter saturation voltage (v) 0.01 0.1 1 10 0.01 0.1 1 10 100 25 c 100 c 100 c ? 25 c figure 8. njw0302g saturation voltage i c , collector current (a) v ce(sat) , collector ? emitter saturation voltage (v) i c /i b = 10
njw0281g (npn) njw0302g (pnp) http://onsemi.com 4 0 10 20 30 40 50 60 70 0.01 0.1 1 10 figure 9. njw0281g current gain bandwidth product i c , collector current (a) f t , current gain bandwidth product (mhz) figure 10. njw0302g current gain bandwidth product i c , collector current (a) f t , current gain bandwidth product (mhz) v ce = 5.0 v 25 c 0 10 20 30 40 50 60 0.01 0.1 1 10 v ce = 5.0 v 25 c
njw0281g (npn) njw0302g (pnp) http://onsemi.com 5 package dimensions to ? 3p ? 3ld case 340ab ? 01 issue a g k l c e j h 123 4 d 3x s b m 0.25 a a p dim a min nom max millimeters 19.70 19.90 20.10 b 15.40 15.60 15.80 c 4.60 4.80 5.00 d 0.80 1.00 1.20 e 1.45 1.50 1.65 g 5.45 bsc h 1.20 1.40 1.60 j 0.55 0.60 0.75 k 19.80 20.00 20.20 l 18.50 18.70 18.90 u 5.00 ref p 3.30 3.50 3.70 q 3.10 3.20 3.50 w 2.80 3.00 3.20 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters 3. dimension b applies to plated terminal and is measured between 0.15 and 0.30mm from the terminal tip. 4. dimension a and b do not include mold flash, protrusions, or gate burrs. f 1.80 2.00 2.20 b g b q a (3 ) seating plane f u w style 1: pin 1. base 2. collector 3. emitter 4. collector style 2: pin 1. anode 2. cathode 3. anode 4. cathode style 3: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 njw0281/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
